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IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust

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    Buy cheap IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust from wholesalers
     
    Buy cheap IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust from wholesalers
    • Buy cheap IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust from wholesalers
    • Buy cheap IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust from wholesalers
    • Buy cheap IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust from wholesalers

    IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust

    Ask Lasest Price
    Brand Name : Infineon
    Model Number : IRFB4227PBF
    Certification : CE, GCF, ROHS
    Price : Negotiable
    Payment Terms : T/T, Western Union,
    Supply Ability : 1000pcs per month
    Delivery Time : 3-5 working days after received the payment
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    IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust

    IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust Design for Motor Control & Power Systems


    Features

    Advanced Process Technology

    Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

    Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

    Low QG for Fast Response

    High Repetitive Peak Current Capability for Reliable Operation

    Short Fall & Rise Times for Fast Switching

    175°C Operating Junction Temperature for Improved Ruggedness

    Repetitive Avalanche Capability for Robustness and Reliability

    Class-D Audio Amplifier 300W-500W (Half-bridge)


    Applications

    1:Motor Drive and Control:

    This is its most typical application scenario. Its high voltage (200V), extremely high current (195A), and ultra-low on-resistance (4.5mΩ) make it highly efficient for driving and controlling high-power DC motors, brushless DC motors (BLDC), and servo motors. It is widely used in industrial automation, robotics, electric vehicles (e.g., motor controllers), drone ESCs (Electronic Speed Controllers), and more.

    2:Switch-Mode Power Supplies (SMPS):
    Particularly suitable for high-current-output DC-DC converters, synchronous rectification, and power factor correction (PFC) circuits. Its low Rds(on) significantly reduces conduction losses, improving overall power supply efficiency.

    3:Power Inverters:
    An ideal choice for inverter bridges in solar photovoltaic inverters, UPS (uninterruptible power supplies), frequency converters, and welding machines, where it converts DC power into AC power.

    4:High-Current Switching and Load Switching:
    Can be used to build solid-state relays, electronic load switches, and other devices for controlling high-power DC loads.


    Description

    This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFETutilizes the latest processing technigues to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.


    INFORMATION

    Category
    Mfr
    Series
    Packaging
    Tube
    Part Status
    Active
    FET Type
    Technology
    Drain to Source Voltage (Vdss)
    200 V
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    24mOhm @ 46A, 10V
    Vgs(th) (Max) @ Id
    5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    98 nC @ 10 V
    Vgs (Max)
    ±30V
    Input Capacitance (Ciss) (Max) @ Vds
    4600 pF @ 25 V
    FET Feature
    -
    Power Dissipation (Max)
    330W (Tc)
    Operating Temperature
    -40°C ~ 175°C (TJ)
    Grade
    -
    Qualification
    -
    Mounting Type
    Through Hole
    Supplier Device Package
    TO-220AB
    Package / Case
    Base Product Number

    Drawing

    Our advantage :phones, PDA's, notebook comput.ers

    • High quality products --- our offers are 100% new and original, ROHS
    • Competitive price --- good Purchase channels with good price.
    • Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
    • Adequate inventory --- With the support of our strong Purchasing team,
    • Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

    be sure to meet your need for all kinds of components. ^_^


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    Quality IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust for sale
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