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| Brand Name : | Infineon |
| Model Number : | SPA04N80C3XKSA1 |
| Certification : | CE, GCF, ROHS |
| Price : | Negotiable |
| Payment Terms : | T/T, Western Union, |
| Supply Ability : | 1000pcs per month |
| Delivery Time : | 3-5 working days after received the payment |
SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives
Features
New revolutionary high voltage technology
Extreme dv/dt rated
High peak current capability
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Ultra low gate charge
Ultra low effective capacitances
Fully isolated package (2500 VAC; 1 minute)
Applications
1:Switch Mode Power Supplies (SMPS)
2:Power Factor Correction (PFC) circuits
3:Industrial motor drives and controls
4:Lighting ballasts and LED drivers
5:Renewable energy systems
Description
The SPA04N80C3XKSA1 is a high-voltage N-channel power MOSFET utilizing advanced super junction technology, delivering exceptional efficiency and reliability for demanding power conversion applications.
INFORMATION
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Obsolete | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.5A, 10V | |
Vgs(th) (Max) @ Id | 3.9V @ 240µA | |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 38W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO220-3-31 | |
Package / Case | ||
Base Product Number |
Drawing

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